30.76%(42.73)%-New Limiting Highest Efficiencies obtained in the \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size
DOI: 10.54647/physics14490 88 Downloads 5855 Views
Author(s)
Abstract
In the n^+(p^+)-p(n) crystalline GaAs-junction solar cells, by basing on a same treatment method, and for a same heavy (low) doping effect, as those given in our recent paper (RP) [1], but using now a new expression, obtained for the relative dielectric constant \varepsilon\left(r_{d\left(a\right)}\right), determined exactly in the effective Bohr model, as that given in Eq. (1c), representing the donor (acceptor) d(a)-radius r_{d\left(a\right)}-effect, or the \varepsilon\left(r_{d\left(a\right)}\right)-effect, suggesting further that, for an increasing r_{d\left(a\right)}, \varepsilon\left(r_{d\left(a\right)}\right) decreases, as showed in Table 1, according to the increase in photovoltaic efficiency η, as observed in Tables 2 and 3, we finally get in our present paper, for highest values of r_{d\left(a\right)}, the new limiting highest efficiencies, η=30.76% (42.73%)<\eta_{RP}=31.474% (44.359%), coming from the fact that: \varepsilon\left(r_{d\left(a\right)}\right)>\varepsilon_{RP}(r_{d(a)}), \varepsilon_{RP}(r_{d(a)})\ being our inaccurate and simple formula, proposed in RP, and also reported in Eq. (1d), for a comparison. Finally, our new limiting highest efficiencies, η=30.76% (42.73%), can also be compared with other limiting \eta-results, such as: 29.1% for GaAs-thin film cell, and 45.7% and 44.4%, respectively for GaInP/GaAs/GaInAs/GaInAs -and- InGaP/GaAs/InGaAs multijunction cells, obtained by Green et al. [3].
Keywords
donor (acceptor)-size effect; heavily doped emitter region; photovoltaic conversion factor; open circuit voltage; photovoltaic conversion efficiency
Cite this paper
H. Van Cong, K. C. Ho-Huynh Thi, C. T. Huynh-Pivet, A. Pivet, P. Damien,
30.76%(42.73)%-New Limiting Highest Efficiencies obtained in the \mathbf{n}^+(\mathbf{p}^+)-\mathbf{p}(\mathbf{n})\ Crystalline GaAs Junction Solar Cells at T=300 K, Due to The Effects of Heavy (Low) Doping and Impurity Size
, SCIREA Journal of Physics.
Volume 7, Issue 5, October 2022 | PP. 180-199.
10.54647/physics14490
References
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